論文

• Tomohiro Yamaguchi, Subaru Takahashi, Takanori Kiguchi, Atsushi Sekiguchi, Kentaro Kaneko, Shizuo Fujita, Hiroki Nagai, Mitsunobu Sato, Takeyoshi Onuma, Tohru Honda
  Impact of hydrochloric acid on the epitaxial growth of In(2)O(3)films on (0001)alpha-Al(2)O(3)substrates by mist CVD.
  APPLIED PHYSICS EXPRESS, 13, 7, ARTN 075504, 2020/07

 

• M. Ono, K. Ishii, K. Kaneko, T. Yamaguchi, T. Honda, S. Fujita, T. Onuma
  Excitation-current-density and temperature dependences of deep UV cathodoluminescence in rocksalt-structured MgxZn1-xO films (vol 125, 225108, 2019)
  JOURNAL OF APPLIED PHYSICS, 127, 6, ARTN 069901, 2020/02

 

• Riena Jinno, Nobuhiro Yoshimura, Kentaro Kaneko, Shizuo Fujita
  Enhancement of epitaxial lateral overgrowth in the mist chemical vapor deposition of ?-Ga₂O₃ by using a-plane sapphire substrate
  JAPANESE JOURNAL OF APPLIED PHYSICS, 58, 12, ARTN 120912, 2019/12

 

• M. Ono, K. Ishii, K. Kaneko, T. Yamaguchi, T. Honda, S. Fujita, T. Onuma
  Excitation-current-density and temperature dependences of deep UV cathodoluminescence in rocksalt-structured MgxZn1-xO films
  JOURNAL OF APPLIED PHYSICS, 125, 22, 225108, 2019/06

 

• Kyohei Ishii, Mizuki Ono, Kentaro Kaneko, Takeyoshi Onuma, Tohru Honda, Shizuo Fujita
  Pure deep-ultraviolet cathodoluminescence from rocksalt-structured MgZnO grown with carbon-free precursors
  APPLIED PHYSICS EXPRESS, 12, 5, 052011, 2019/05

 

• 金子 健太郎, 藤田 静雄
  準安定相(非平衡)酸化物の作製と物性
  材料, 68, 10, 733-738, 2019

 

• Kentaro Kaneko, Masafumi Ono, Takashi Tanaka, Takayuki Uchida, Shizuo Fujita
  Tin oxide coating by nonvacuum-based mist chemical vapor deposition on stainless steel separators for polymer electrolyte fuel cells
  JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 11, 117103, 2018/11

 

• Shin-ichi Kan, Shu Takemoto, Kentaro Kaneko, Isao Takahashi, Masahiro Sugimoto, Takashi Shinohe, Shizuo Fujita
  Electrical properties of alpha-Ir2O3/alpha-Ga₂O₃ pn heterojunction diode and band alignment of the heterostructure
  APPLIED PHYSICS LETTERS, 113, 21, 212104, 2018/11

 

• Kentaro Kaneko, Keiichi Tsumura, Kyohei Ishii, Takayoshi Onuma, Tohru Honda, Shizuo Fujita
  Deep-Ultraviolet Luminescence of Rocksalt-Structured Mg (x) Zn1-x O (x > 0.5) Films on MgO Substrates
  JOURNAL OF ELECTRONIC MATERIALS, 47, 8, 4356-4360, 2018/08

 

• T. Onuma, M. Ono, K. Ishii, K. Kaneko, T. Yamaguchi, S. Fujita, T. Honda
  Impact of local arrangement of Mg and Zn atoms in rocksalt-structured MgxZn1-xO alloys on bandgap and deep UV cathodoluminescence peak energies
  APPLIED PHYSICS LETTERS, 113, 6, 061903, 2018/08

 

• Takayuki Uchida, Riena Jinno, Shu Takemoto, Kentaro Kaneko, Shizuo Fujita
  Evaluation of band alignment of alpha-Ga(2)o(3)/alpha-(AlxGa1-x)(2)O-3 heterostructures by X-ray photoelectron spectroscopy
  JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 4, 040314, 2018/04

 

• Riena Jinno, Takayuki Uchida, Kentaro Kaneko, Shizuo Fujita
  Control of Crystal Structure of Ga₂O₃ on Sapphire Substrate by Introduction of -(AlxGa1-x)(2)O-3 Buffer Layer
  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 255, 4, 1700326, 2018/04

 

• Kentaro Kaneko, Shizuo Fujita, Toshimi Hitora
  A power device material of corundum-structured alpha-Ga₂O₃ fabricated by MIST EPITAXY (R) technique
  JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 2, 02CB18, 2018/02

 

• Takayuki Uchida, Kentaro Kaneko, Shizuo Fujita
  Electrical characterization of Si-doped n-type alpha-Ga₂O₃ on sapphire substrates
  MRS ADVANCES, 3, 3, 171-177, 2018/01

 

• Shin-ichi Kan, Shu Takemoto, Kentaro Kaneko, Takashi Shinohe, Shizuo Fujita
  Study on corundum-structured p-type iridium oxide thin films and band alignment at iridium oxide/gallium oxide hetero-junction
  2018 IEEE CPMT SYMPOSIUM JAPAN (ICSJ), 95-98, 2018

 

• Shun Osaka, Osamu Kubo, Kazuki Takahashi, Masaya Oda, Kentaro Kaneko, Hiroshi Tabata, Shizuo Fujita, Mitsuhiro Katayama
  Unpredicted surface termination of alpha-Fe₂O₃(0001) film grown by mist chemical vapor deposition
  SURFACE SCIENCE, 660, 9-15, 2017/06

 

• Kentaro Kaneko, Masashi Kitajima, Shizuo Fujita
  Corundum-Structured alpha-In2O3 as a Wide-Bandgap Semiconductor for Electrical Devices
  MRS ADVANCES, 2, 5, 301-307, 2017/01

 

• 人羅 俊実, 金子 健太郎, 藤田 静雄
  パワーデバイス用Ga₂O₃結晶
  電気学会誌, 137, 10, 693-696, 2017/01

 

• 金子 健太郎, 高木 良輔, 田中 孝, 人羅 俊実, 藤田 静雄
  高導電性･高耐食性酸化膜で被覆された燃料電池金属セパレータ
  材料, 66, 9, 639-643, 2017/01

 

• 金子 健太郎
  半導体材料・デバイスの最新の進展
  材料, 66, 1, 58-65, 2017/01

 

• Kentaro Kaneko, Masaya Oda, Toshimi Hitora, Shizuo Fujita
  Corundum-strructured alpha-Ga₂O₃-based alloys for future power device applications
  2017 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP), 156-157, 2017

 

• Kazuaki Akaiwa, Kentaro Kaneko, Kunio Ichino, Shizuo Fujita
  Conductivity control of Sn-doped alpha-Ga₂O₃ thin films grown on sapphire substrates
  JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 12, 1202BA, 2016/12

 

• Sam-dong Lee, Kentaro Kaneko, Shizuo Fujita
  Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition
  JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 12, 1202B8, 2016/12

 

• Shizuo Fujita, Masaya Oda, Kentaro Kaneko, Toshimi Hitora
  Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices
  JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 12, 1202A3, 2016/12

 

• Masaya Oda, Kentaro Kaneko, Shizuo Fujita, Toshimi Hitora
  Crack-free thick (similar to 5 mu m) alpha-Ga2O3 films on sapphire substrates with alpha-(Al,Ga)(2)O-3 buffer layers
  JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 12, 1202B4, 2016/12

 

• Kentaro Kaneko, Takeyoshi Onuma, Keiichi Tsumura, Takayuki Uchida, Riena Jinno, Tomohiro Yamaguchi, Tohru Honda, Shizuo Fujita
  Growth of rocksalt-structured MgxZn1-xO (x > 0.5) films on MgO substrates and their deep-ultraviolet luminescence
  APPLIED PHYSICS EXPRESS, 9, 11, 111102, 2016/11

 

• Riena Jinno, Takayuki Uchida, Kentaro Kaneko, Shizuo Fujita
  Reduction in edge dislocation density in corundum-structured alpha-Ga₂O₃ layers on sapphire substrates with quasi-graded alpha-(Al,Ga)(2)O-3 buffer layers
  APPLIED PHYSICS EXPRESS, 9, 7, 071101, 2016/07

 

• E. Chikoidze, H. J. von Bardeleben, K. Akaiwa, E. Shigematsu, K. Kaneko, S. Fujita, Y. Dumont
  Electrical, optical, and magnetic properties of Sn doped alpha-Ga₂O₃ thin films
  JOURNAL OF APPLIED PHYSICS, 120, 2, 025109, 2016/07

 

• Daiki Tamba, Osamu Kubo, Masaya Oda, Shun Osaka, Kazuki Takahashi, Hiroshi Tabata, Kentaro Kaneko, Shizuo Fujita, Mitsuhiro Katayama
  Surface termination structure of alpha-Ga₂O₃ film grown by mist chemical vapor deposition
  APPLIED PHYSICS LETTERS, 108, 25, 251602, 2016/06

 

• Kentaro Kaneko, Kenta Suzuki, Yoshito Ito, Shizuo Fujita
  Growth characteristics of corundum-structured alpha-(AlxGa1-x)(2)O-3/Ga₂O₃ heterostructures on sapphire substrates
  JOURNAL OF CRYSTAL GROWTH, 436, 150-154, 2016/02

 

• 金子 健太郎, 人羅 俊実, 藤田 静雄
  コランダム構造n型およびp型ワイドギャップ酸化物半導体の結晶成長と応用 (レーザ・量子エレクトロニクス)
  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116, 358, 85-88, 2016/01

 

• 赤岩 和明, 市野 邦男, 金子 健太郎, 藤田 静雄
  sapphire基板上へのコランダム構造酸化ガリウムの成長と電気特性制御 (レーザ・量子エレクトロニクス)
  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116, 358, 107-111, 2016/01

 

• 金子 健太郎, 織田 真也, 高塚 章夫, 人羅 俊実, 藤田 静雄
  コランダム構造酸化ガリウムの結晶成長とデバイス応用 (特集 半導体エレクトロニクス)
  材料, 65, 9, 631-637, 2016/01

 

• Riena Jinno, Takayuki Uchida, Kentaro Kaneko, Shizuo Fujita
  Fabrication of alpha-Ga₂O₃ Thin Films Using alpha-(AlxGa1-x)(2)O-3 Buffer Layers and its Crystal Structure Properties
  2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 150-154, 2016

 

• Takayuki Uchida, Riena Jinno, Shu Takemoto, Kentaro Kaneko, Shizuo Fujita
  Characterization of band offset in alpha-(AlxGa1-x)(2)O-3 heterostructures
  2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 150-154, 2016

 

• Kentaro Kaneko, Yoshito Ito, Takayuki Uchida, Shizuo Fujita
  Growth and metal-oxide-semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors
  APPLIED PHYSICS EXPRESS, 8, 9, 095503, 2015/09

 

• 柴山 健次, 金子 健太郎, 藤田 静雄
  超音波噴霧ミスト法によるCu₂ZnSnS₄薄膜の成膜
  材料, 64, 5, 410-413, 2015/01

 

• 伊藤 義人, 金子 健太郎, 藤田 静雄
  コランダム構造酸化物半導体の成長とMOSFET試作 (電子デバイス)
  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 115, 63, 27-30, 2015/01